Samsung patents magnetic memory with new side coating layer
Samsung has secured a patent for a specific design of magnetic memory, a type of storage that uses magnetism rather than electricity to hold data. The invention focuses on a thin coating layer placed next to the memory cell, which is made of mixed materials to improve the device's structure during manufacturing.
In the filing’s own words
A magnetic memory device and a method for fabricating the same are provided. The magnetic memory device includes a substrate, a lower insulating layer on the substrate, a memory cell including a first magnetic pattern, a tunnel barrier pattern and a second magnetic pattern, which are sequentially stacked on the lower insulating layer, and a re-deposition insertion layer extending along an upper surface of the lower insulating layer from a side of the memory cell, wherein the re-deposition insertion layer includes a re-deposition insulating layer, a mixed layer and a re-deposition byproduct layer, which are sequentially stacked on the lower insulating layer, and the mixed layer includes both a material included in the re-deposition insulating layer and a material included in the re-deposition byproduct layer.
What exactly they claim (claim 1)
1. A magnetic memory device comprising: a substrate; a lower insulating layer on the substrate; a memory cell including a first magnetic pattern, a tunnel barrier pattern and a second magnetic pattern, which are sequentially stacked on the lower insulating layer; and a re-deposition insertion layer extending along an upper surface of the lower insulating layer from a side of the memory cell, wherein the re-deposition insertion layer includes a re-deposition insulating layer, a mixed layer and a re-deposition byproduct layer, which are sequentially stacked on the lower insulating layer, and the mixed layer includes both a material included in the re-deposition insulating layer and a material included in the re-deposition byproduct layer.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Magnetic memory device and method for fabricating the same
- Patent number
- US12745568B2
- Application number
- 18505152
- Filed
- Nov 9, 2023
- Granted
- Sep 22, 2026
- Inventors
- 2
- Claims
- 20
Classified under
H10N 50/01 Electricity & electronicsG11C 11/161 Physics & computingH10B 61/00 Electricity & electronicsH10N 50/10 Electricity & electronicsH10N 50/80 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.