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SamsungGranted patentChips & hardwareInterest 4/10

Samsung patents chip design that wraps capacitors around wiring holes

Samsung has been granted a patent for a logic device that integrates capacitors directly into the chip's insulating layers. The design features a capacitor structure that continuously extends through vertical holes and along the surface around them, with specific width ratios relative to the wiring.

Why it mattersThis filing details a specific method for packing components into computer chips, which is a routine but essential part of improving hardware density and performance.

In the filing’s own words

A logic device includes a substrate; at least one first insulating layer on the substrate; a second insulating layer on the at least one first insulating layer; and a capacitor portion in the at least one first insulating layer and the second insulating layer, wherein the at least one first insulating layer includes a plurality of through-holes, the capacitor portion includes a capacitor structure including a lower electrode, a dielectric film, and an upper electrode, and the capacitor structure continuously extends along the inside of the plurality of through-holes and along an upper surface of the at least one first insulating layer around the plurality of through-holes.

What exactly they claim (claim 1)

1. A logic device, comprising: a substrate; at least one first insulating layer on the substrate, the at least one first insulating layer including a plurality of through-holes therein; a second insulating layer on the at least one first insulating layer; wires in the at least one first insulating layer and the second insulating layer; and a capacitor portion in the at least one first insulating layer and the second insulating layer, the capacitor portion including a capacitor structure with a lower electrode, a dielectric film, and an upper electrode, and the capacitor structure continuously extending inside the plurality of through-holes of the at least one first insulating layer and along an upper surface of the at least one first insulating layer around each of the plurality of through-holes, wherein a ratio of a width of each of the plurality of through-holes to a width of each of the wires is 1:5 to 1:10.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
Logic device and manufacturing method thereof
Patent number
US12745408B2
Application number
18234517
Filed
Aug 16, 2023
Granted
Sep 22, 2026
Inventors
7
Claims
18

Classified under

H10D 1/716 Electricity & electronicsH03K 19/08 Electricity & electronicsH10D 1/042 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.