/Patent Tracker
SamsungGranted patentChips & hardwareInterest 5/10

Samsung patents flash memory that adjusts voltage based on write speed

This patent describes a storage device that measures how long it takes to write or erase data in NAND flash memory. The controller uses this timing data to automatically adjust the electrical voltage needed for future operations to match the memory's current condition.

Why it mattersIt helps maintain reliable data storage in devices like phones and SSDs by adapting to the natural wear of memory chips over time.

In the filing’s own words

A storage device is provided. The storage device includes a nonvolatile memory device configured to receive a command and an address for a write operation or an erase operation via command-address pins, transmit and receive write data or read data via data pins, and generate degeneration information by measuring at least one of a program execution time to perform the write operation and an erase execution time to perform the erase operation; and a storage controller configured to receive the degeneration information from the nonvolatile memory device, and control the nonvolatile memory device to adjust at least one of a program voltage of the write operation and an erase voltage of the erase operation based on the degeneration information.

What exactly they claim (claim 1)

1. A storage device comprising: a NAND flash memory device configured to receive a command and an address for a write operation or an erase operation via command-address pins, transmit and receive write data or read data via data pins, and generate degeneration information indicating at least one of a program execution time required to perform the write operation and an erase execution time required to perform the erase operation; and a storage controller configured to receive the degeneration information from the NAND flash memory device, and control the NAND flash memory device to adjust at least one of a program voltage of the write operation and an erase voltage of the erase operation based on the degeneration information, wherein the storage controller is configured to adjust the program voltage to a first voltage level based on the program execution time indicated by the degeneration information being within a first interval, and adjust the program voltage to a second voltage level different from the first voltage level based on the program execution time indicated by the degeneration information being within a second interval different from the first interval.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
Nonvolatile memory device and operating method based on program execution and/or erase execution time
Patent number
US12744096B2
Application number
18735986
Filed
Jun 6, 2024
Granted
Sep 22, 2026
Inventors
1
Claims
20

Classified under

G11C 16/349 Physics & computingG11C 16/08 Physics & computingG11C 16/102 Physics & computingG11C 16/32 Physics & computing
Read the full filing (official PDF) ↗ Open in the Patent Tracker

More from Samsung in Chips & hardware

Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.