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Samsung patents 3D magnetic memory layout using spin-orbit torque

Samsung has been granted a patent for a magnetic memory design that stacks magnetic tunnel junctions in offset rows to save space. The device uses specific wiring lines to write data via spin-orbit torque and separate lines to read the stored information.

Why it mattersThis layout aims to make magnetic memory chips smaller and more efficient, which could eventually lead to faster or more durable storage in computers and phones.

In the filing’s own words

Disclosed is a magnetic memory device comprising write and read word lines that extend in a first direction on a substrate, the write word line and the read word line spaced apart from each other in a second direction and parallel to a bottom surface of the substrate, first source/drain contacts on one side of the write word line and spaced apart from each other in the first direction, second source/drain contacts on one side of the read word line and spaced apart from each other in the first direction, magnetic tunnel junction patterns connected to the second source/drain contacts, and spin-orbit torque lines on the magnetic tunnel junction patterns and connected to the first source/drain contacts. The magnetic tunnel junction patterns are spaced apart from each other in a third direction. The spin-orbit torque lines are spaced apart from each other in the third direction.

What exactly they claim (claim 1)

1. A magnetic memory device, comprising: a write word line and a read word line that extend in a first direction on a substrate, and the write word line and the read word line are spaced apart from each other in a second direction, the first direction and the second direction intersecting each other and parallel to a bottom surface of the substrate; a plurality of first source/drain contacts on one side of the write word line and spaced apart from each other in the first direction; a plurality of second source/drain contacts on one side of the read word line and spaced apart from each other in the first direction; a plurality of magnetic tunnel junction patterns, each of the plurality of magnetic tunnel junction patterns correspondingly connected to a one of the plurality of second source/drain contacts; and a plurality of spin-orbit torque lines, each of the plurality of spin-orbit torque lines correspondingly on a one of the plurality of magnetic tunnel junction patterns and correspondingly connected to a one of the plurality of first source/drain contacts, wherein the plurality of magnetic tunnel junction patterns comprises a first plurality of magnetic tunnel junction patterns arranged in a first row extending in the first direction and a second plurality of magnetic tunnel junction patterns arranged in a second row extending in the first direction, wherein the first row is offset from the second row in the second direction, and wherein magnetic tunnel junction patterns in the first plurality of magnetic tunnel junction patterns are offset, in the first direction, from immediately neighboring magnetic tunnel junction patterns in the second plurality of magnetic tunnel junction patterns.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines
Patent number
US12744068B2
Application number
17890625
Filed
Aug 18, 2022
Granted
Sep 22, 2026
Inventors
2
Claims
20

Classified under

G11C 11/161 Physics & computingG11C 11/1655 Physics & computingG11C 11/1657 Physics & computingG11C 11/1673 Physics & computingG11C 11/1675 Physics & computingH10B 61/22 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.