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Samsung patents gas heating method for chip manufacturing

Samsung has been granted a patent for a method of supplying gas during chip production. The system heats a gas tank and lines to break down diborane gas into smaller chemical components before sending it to the processing chamber.

Why it mattersThis is a specific technical improvement in how gases are prepared for semiconductor fabrication, which helps ensure consistent material deposition in chip manufacturing.

In the filing’s own words

The present disclosure provides methods and apparatuses for supplying a process gas in a semiconductor manufacturing process. In some embodiments, the method includes heating, using one or more heating devices of the semiconductor manufacturing apparatus, a gas tank and a gas line of the semiconductor manufacturing apparatus. The method further includes filling, through the gas line, the gas tank with a reaction gas. The method further includes changing, using the one or more heating devices, a temperature of the reaction gas in the gas tank. The method further includes supplying the reaction gas from the gas tank to a process chamber of the semiconductor manufacturing apparatus. The changing of the temperature of the reaction gas includes decomposing a portion of the reaction gas into one or more materials different from the reaction gas.

What exactly they claim (claim 1)

1. A method of supplying a process gas in a semiconductor manufacturing process by a semiconductor manufacturing apparatus, comprising: heating, using one or more heating devices of the semiconductor manufacturing apparatus, a gas tank and a gas line of the semiconductor manufacturing apparatus; filling, through the gas line, the gas tank with a reaction gas comprising diborane (B 2 H 6); changing, using the one or more heating devices, a temperature of the reaction gas in the gas tank; and supplying the reaction gas from the gas tank to a process chamber of the semiconductor manufacturing apparatus, wherein the changing of the temperature of the reaction gas comprises decomposing a portion of the diborane to at least one of B 3 H 9, B 4 H 10, and B 5 H 11.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
Semiconductor manufacturing apparatus, gas supplying method using the same, and semiconductor manufacturing method using the same
Patent number
US12742240B2
Application number
18227467
Filed
Jul 28, 2023
Granted
Sep 22, 2026
Inventors
5
Claims
14

Classified under

C23C 16/45561 Chemistry & metalsC23C 16/52 Chemistry & metalsH10B 41/27 Electricity & electronicsH10B 43/27 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.