Samsung patents chip layers using same material with different physical traits
Samsung has been granted a patent for a semiconductor design that stacks protective insulating layers on top of a chip. The key feature is using the same material for different parts of these layers, but treating them so they have different physical properties to improve the device's structure.
In the filing’s own words
A semiconductor device includes an interlayer insulating layer, a first protective insulating layer on the interlayer insulating layer, a second protective insulating layer on the first protective insulating layer, and insulating structures disposed in at least one of the first protective insulating layer or the second protective insulating layer, wherein the insulating structures include a first insulating structure including a first material having a first physical property, and a second insulating structure including a second material having a second physical property, and the first material and the second material include a same material, and the first physical property and the second physical property are different physical properties.
What exactly they claim (claim 1)
1. A semiconductor device comprising: an interlayer insulating layer; a first protective insulating layer on the interlayer insulating layer; a second protective insulating layer on the first protective insulating layer; and a plurality of insulating structures disposed in at least one of the first protective insulating layer or the second protective insulating layer, wherein the plurality of insulating structures comprise: a first insulating structure comprising a first material having a first physical property; and a second insulating structure comprising a second material having a second physical property, wherein the first material and the second material comprise a same material, and the first physical property and the second physical property are different physical properties.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Semiconductor device and method for manufacturing the same
- Patent number
- US12740472B2
- Application number
- 18459111
- Filed
- Aug 31, 2023
- Granted
- Sep 15, 2026
- Inventors
- 4
- Claims
- 15
Classified under
H10W 74/131 Electricity & electronicsH10W 20/071 Electricity & electronicsH10W 20/47 Electricity & electronicsH10W 74/01 Electricity & electronicsH10W 74/147 Electricity & electronicsH10W 72/222 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.