Samsung patents chip wiring with unevenly curved sides
Samsung describes a semiconductor design where the vertical connections between wiring layers have curved sides. The patent specifies that the curvature on one side of these connections differs from the curvature on the opposite side.
In the filing’s own words
Provided is a semiconductor device and method of manufacturing same. The semiconductor device includes: a transistor on a substrate; a first wiring layer on the transistor, the first wiring layer including a first wiring electrically connected to the transistor; and a second wiring layer on the first wiring layer, the second wiring layer including an interlayer insulating layer and a second wiring provided in the interlayer insulating layer, wherein the second wiring includes a line structure and a first via structure, wherein the first via structure vertically connects the line structure and the first wiring, wherein the first via structure includes: a first outer surface in contact with the interlayer insulating layer; and a second outer surface in contact with the interlayer insulating layer and facing a direction opposite from the first outer surface, wherein the first outer surface and the second outer surface are curved surfaces, and wherein a curvature of the first outer surface and a curvature of the second outer surface are different from each other.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a transistor on a substrate; a first wiring layer on the transistor, the first wiring layer comprising a first wiring electrically connected to the transistor; and a second wiring layer on the first wiring layer, the second wiring layer comprising an interlayer insulating layer and a second wiring provided in the interlayer insulating layer, wherein the second wiring comprises a line structure and a first via structure, wherein the first via structure vertically connects the line structure and the first wiring, wherein the first via structure comprises: a first outer surface in contact with the interlayer insulating layer; and a second outer surface in contact with the interlayer insulating layer and facing a direction opposite from the first outer surface, wherein the first outer surface and the second outer surface are curved surfaces, and wherein a curvature of the first outer surface and a curvature of the second outer surface are different from each other.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Semiconductor device and method of manufacturing the same
- Patent number
- US12740401B2
- Application number
- 18587425
- Filed
- Feb 26, 2024
- Granted
- Sep 15, 2026
- Inventors
- 2
- Claims
- 20
Classified under
H10W 20/435 Electricity & electronicsH10D 30/43 Electricity & electronicsH10D 30/6735 Electricity & electronicsH10D 30/6757 Electricity & electronicsH10D 62/121 Electricity & electronicsH10D 84/85 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.