/Patent Tracker
SamsungGranted patentChips & hardwareInterest 4/10

Samsung patents chip wiring using ruthenium and molybdenum

Samsung has been granted a patent for a specific way to build the tiny metal connections inside computer chips. The design uses ruthenium or molybdenum to create vertical and horizontal wires that connect seamlessly, forming a solid structure without gaps between layers.

Why it mattersThis is a routine improvement to chip manufacturing that helps engineers build more reliable and efficient internal wiring for future processors.

In the filing’s own words

Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a lower metal via, an upper metal via, a lower metal wire comprising a lower surface contacting the lower metal via and an upper surface contacting the upper metal via, and an upper metal wire on the upper metal via. The upper metal via is between the lower metal wire and the upper metal wire, and each of the lower metal via, the lower metal wire and the upper metal via comprises ruthenium (Ru) or molybdenum (Mo).

What exactly they claim (claim 1)

1. An integrated circuit device comprising: a lower metal via within a first insulating layer; an upper metal via in a second insulating layer on the first insulating layer; a lower metal wire in the second insulating layer; and an upper metal wire on the upper metal via, wherein the upper metal via is between the lower metal wire and the upper metal wire, wherein the upper metal via and the lower metal wire are connected to each other as a monolithic structure without an interface therebetween, wherein a width of an upper end of the lower metal wire is greater than a width of an upper surface of the upper metal via, wherein a side surface of the lower metal wire is aligned with a side surface of the upper metal via, wherein the lower metal via comprises ruthenium (Ru) or molybdenum (Mo), wherein the lower metal wire comprises Ru or Mo, and wherein the upper metal via comprises Ru or Mo.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
Integrated circuit devices including a via and methods of forming the same
Patent number
US12740393B2
Application number
17822246
Filed
Aug 25, 2022
Granted
Sep 15, 2026
Inventors
3
Claims
15

Classified under

H10W 20/42 Electricity & electronicsH10W 20/01 Electricity & electronics

More from Samsung in Chips & hardware

Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.