Samsung patents memory layer using thin nitride to align magnetic bits
Samsung describes a design for magnetoresistive random-access memory (MRAM) that uses a very thin nitride layer to help grow a specific type of magnetic material called a Heusler compound. This setup allows the magnetic bits to stand upright, or have perpendicular magnetic anisotropy, which helps store data in a stable way. The patent also mentions an alternative design using a thin layer of tantalum nitride instead.
In the filing’s own words
A magnetoresistive random-access memory cell includes a substrate; a sub-monolayer nitride layer, outward of the substrate, having a sub-monolayer nitride layer thickness less than 10 Angstroms; and a templating layer, outward of the sub-monolayer nitride layer, and including a binary alloy having an alternating layer lattice structure. A Heusler layer is located outward of the templating layer. The Heusler layer includes a Heusler compound and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the Heusler layer, and a magnetic layer is outward of the tunnel barrier. In an alternative aspect, instead of the sub-monolayer nitride layer, a tantalum nitride layer with a thickness of ≤10 Angstroms+10% is employed.
What exactly they claim (claim 1)
1. A magnetoresistive random-access memory cell, comprising: a substrate; a sub-monolayer non-magnetic nitride layer, outward of the substrate, and having a sub-monolayer non-magnetic nitride layer thickness less than 10 Angstroms; a templating layer, outward of the sub-monolayer non-magnetic nitride layer, comprising a binary alloy having an alternating layer lattice structure; a Heusler layer located outward of the templating layer, the Heusler layer comprising a Heusler compound and exhibiting perpendicular magnetic anisotropy (PMA); a tunnel barrier outward of the Heusler layer; and a magnetic layer outward of the tunnel barrier.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Interfacial nitridation for growth of perpendicularly magnetized Heusler films
- Patent number
- US12740326B2
- Application number
- 18231734
- Filed
- Aug 8, 2023
- Granted
- Sep 15, 2026
- Inventors
- 7
- Claims
- 25
Classified under
H10N 50/80 Electricity & electronicsH10B 61/00 Electricity & electronicsH10N 50/01 Electricity & electronicsH10N 50/20 Electricity & electronicsH10N 50/85 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.