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Samsung patents stacked image sensor design with shared gate connections

Samsung has been granted a patent for an image sensor that stacks two semiconductor layers to improve camera performance. The design uses a trench in the top layer to connect the gate electrodes of the bottom layer to metal wiring, allowing for tighter integration of components.

Why it mattersThis is a standard improvement in camera chip manufacturing that helps make sensors more efficient and compact, which is typical for major electronics manufacturers.

In the filing’s own words

An image sensor is provided, the image sensor comprises a first semiconductor substrate; a photoelectric conversion layer in the first semiconductor substrate; a color filter on a first surface of the first semiconductor substrate; a micro lens covering the color filter; a first transistor on the first semiconductor substrate; a first insulating layer on a second surface; a second semiconductor substrate in contact with the first insulating layer, the second semiconductor substrate including a gate trench exposing at least a portion of the first gate structure; a second transistor on the second semiconductor substrate; a second insulating layer on the fourth surface; and a metal layer in the second insulating layer.

What exactly they claim (claim 1)

1. An image sensor comprising: a first semiconductor substrate including a first surface and a second surface opposite to the first surface; a photoelectric conversion layer in the first semiconductor substrate; a color filter on the first surface of the first semiconductor substrate; a micro lens covering the color filter; a first transistor on the second surface, the first transistor including a first gate structure adjacent to the photoelectric conversion layer, the first gate structure including a first gate electrode; a first insulating layer on the second surface; a second semiconductor substrate including a third surface in contact with the first insulating layer and a fourth surface opposite to the third surface, the second semiconductor substrate including a gate trench exposing at least a portion of the first gate electrode; a second transistor on the fourth surface, the second transistor including a second gate structure; a second insulating layer on the fourth surface; and a metal layer in the second insulating layer, wherein the first gate electrode is electrically connected with the metal layer via a first contact different from the first gate electrode and electrically contacting the metal layer and the first gate structure, wherein a width of the gate trench is greater than a width of an upper surface of the first gate electrode, and wherein a lower surface of the second gate structure is on the fourth surface, and an upper surface of the second gate structure and an upper surface of the first gate structure extend in a direction parallel to a surface of the second insulating layer.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
Image sensor and method of manufacturing image sensor
Patent number
US12740175B2
Application number
17834365
Filed
Jun 7, 2022
Granted
Sep 15, 2026
Inventors
1
Claims
14

Classified under

H10F 39/809 Electricity & electronicsH10F 39/014 Electricity & electronicsH10F 39/018 Electricity & electronicsH10F 39/80373 Electricity & electronicsH10F 39/182 Electricity & electronicsH10F 39/8053 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.