Samsung patents image sensor design with diamond-shaped silicon layers
Samsung has been granted a patent for a specific way to build image sensors, which are the components that capture light in cameras. The design uses a grid of pixels separated by insulating walls, where some of these walls feature a diamond-shaped silicon layer to help manage electrical signals.
In the filing’s own words
An image sensor includes a substrate including a first surface and a second surface opposite to the first surface, and a pixel separation part in the substrate, the pixel separation part separating a plurality of pixels from each other, the plurality of pixels including first to fourth pixels in a clockwise direction, the pixel separation part including a first part between the first and second pixels, and a second part between the first pixel and the third pixel. Each of the first part and the second part includes a first dielectric pattern covering a lateral surface of the substrate, and a first silicon pattern covering a lateral surface of the first dielectric pattern. The second part further includes a second silicon pattern adjacent to a sidewall of the first silicon pattern. The second silicon pattern has a rhombic shape in a plan view.
What exactly they claim (claim 1)
1. An image sensor, comprising: a substrate including a first surface and a second surface opposite to the first surface; and a pixel separation part in the substrate, the pixel separation part separating a plurality of pixels from each other, the plurality of pixels including a first pixel, a second pixel, a third pixel, and a fourth pixel in a clockwise direction, the pixel separation part including, a first part between the first pixel and the second pixel, and a second part between the first pixel and the third pixel, wherein each of the first part and the second part includes, a first dielectric pattern covering a lateral surface of the substrate, and a first silicon pattern covering a lateral surface of the first dielectric pattern, and the second part further includes a second silicon pattern adjacent to a sidewall of the first silicon pattern, the second silicon pattern having a rhombic shape in a plan view.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Image sensor and method of fabricating the same
- Patent number
- US12740174B2
- Application number
- 18446752
- Filed
- Aug 9, 2023
- Granted
- Sep 15, 2026
- Inventors
- 4
- Claims
- 20
Classified under
H10F 39/807 Electricity & electronicsH10F 39/802 Electricity & electronicsH10F 39/811 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.