Samsung patents chip stacking method using manganese layers
Samsung describes a method for building semiconductor devices by bonding a lower and an upper chip together. The process involves etching trenches in each chip and using a sputtering process to deposit specific seed films, including layers containing manganese, to prepare the surfaces for bonding.
In the filing’s own words
The present disclosure provides a semiconductor device manufacturing method that includes forming a lower chip and an upper chip, and bonding the lower chip and the upper chip to each other. The forming of the lower chip includes providing a lower substrate, sequentially forming a lower interlayer insulating film and a pre-lower adhesive film, etching portions of the pre-lower adhesive film and the lower interlayer insulating film to form a lower trench, forming, using a sputtering process, a first lower seed film and a second lower seed film. The forming of the upper chip includes providing an upper substrate, sequentially forming an upper interlayer insulating film and a pre-upper adhesive film, etching portions of the pre-upper adhesive film and the upper interlayer insulating film to form an upper trench, forming, using the sputtering process, a first upper seed film and a second upper seed film.
What exactly they claim (claim 1)
1. A semiconductor device manufacturing method, comprising: forming a lower chip and an upper chip; and bonding the lower chip and the upper chip to each other; wherein the forming of the lower chip comprises: providing a lower substrate; sequentially forming, on the lower substrate, a lower interlayer insulating film and a pre-lower adhesive film; etching a first portion of the pre-lower adhesive film and a second portion of the lower interlayer insulating film to form a lower trench; forming, using a sputtering process, a first lower seed film in the lower trench; and forming, using the sputtering process, a second lower seed film on the first lower seed film, wherein the forming of the upper chip comprises: providing an upper substrate; sequentially forming, on the upper substrate, an upper interlayer insulating film and a pre-upper adhesive film; etching a third portion of the pre-upper adhesive film and a fourth portion of the upper interlayer insulating film to form an upper trench; forming, using the sputtering process, a first upper seed film in the upper trench; and forming, using the sputtering process, a second upper seed film on the first upper seed film, and wherein the second lower seed film and the second upper seed film comprise manganese (Mn).
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Semiconductor device manufacturing method and semiconductor device manufactured using the same
- Patent number
- US12740173B2
- Application number
- 18433177
- Filed
- Feb 5, 2024
- Granted
- Sep 15, 2026
- Inventors
- 5
- Claims
- 17
Classified under
H10F 39/807 Electricity & electronicsH10F 39/8063 Electricity & electronicsH10F 39/809 Electricity & electronicsH10F 39/811 Electricity & electronicsH10W 72/01938 Electricity & electronicsH10W 72/01953 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.