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Samsung patents stacked transistors using carbon and oxygen layers

This patent describes a semiconductor device where two transistor structures are stacked vertically on a substrate. The design features channel layers with specific tapered shapes and includes carbon and oxygen in the semiconductor material.

Why it mattersThis is a routine improvement in chip manufacturing that focuses on the physical structure of transistors to potentially improve performance or density.

In the filing’s own words

A semiconductor device includes a first transistor structure on a substrate, the first transistor structure including first channel layers spaced apart from each other, a first gate electrode surrounding the first channel layers, a first source/drain region connected to the first channel layers on a first side of the first gate electrode, and a second source/drain region connected to the first channel layers on a second side of the first gate electrode that is opposite to the first side of the first gate electrode, and a second transistor structure on the first transistor structure, the second transistor structure including second channel layers spaced apart from each other, a second gate electrode surrounding the second channel layers, and a third source/drain region connected to the second channel layers on a first side of the second gate electrode.

What exactly they claim (claim 1)

1. A semiconductor device comprising: a first transistor structure on a substrate, the first transistor structure comprising: first channel layers spaced apart from each other; a first gate electrode surrounding the first channel layers; a first source/drain region connected to the first channel layers on a first side of the first gate electrode; and a second source/drain region connected to the first channel layers on a second side of the first gate electrode that is opposite to the first side of the first gate electrode, and a second transistor structure on the first transistor structure, the second transistor structure comprising: second channel layers spaced apart from each other; a second gate electrode surrounding the second channel layers; a third source/drain region connected to the second channel layers on a first side of the second gate electrode; and a fourth source/drain region connected to the second channel layers on a second side of the second gate electrode that is opposite to first side of the second gate electrode, wherein a width of an upper surface of an uppermost first channel layer among the first channel layers is smaller than a width of a lower surface of the uppermost first channel layer, wherein a width of a lower surface of a lowermost second channel layer among the second channel layers is smaller than a width of an upper surface of the lowermost second channel layer, and wherein at least one channel layer of the first channel layers and the second channel layers comprises a semiconductor layer comprising at least one of carbon (C) and oxygen (O).

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
Semiconductor device
Patent number
US12740138B2
Application number
18196191
Filed
May 11, 2023
Granted
Sep 15, 2026
Inventors
5
Claims
20

Classified under

H10D 84/856 Electricity & electronicsH10D 30/014 Electricity & electronicsH10D 30/43 Electricity & electronicsH10D 30/6729 Electricity & electronicsH10D 30/6735 Electricity & electronicsH10D 62/121 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.