Samsung patents chip capacitor mixing three types of electrical materials
Samsung describes a design for a capacitor used inside computer chips that combines three different electrical materials in a layered structure. The design mixes an anti-ferroelectric base with smaller particles of ferroelectric and paraelectric materials to improve how the component stores charge.
In the filing’s own words
An integrated circuit device includes a transistor disposed on a substrate and a capacitor structure electrically connected with the transistor, wherein the capacitor structure includes a first electrode, a dielectric film composite disposed on the first electrode, and a second electrode disposed on the dielectric film composite, and the dielectric film composite includes a first dielectric film including an anti-ferroelectric material, a second dielectric filler distributed and disposed in the first dielectric film, the second dielectric filler including a ferroelectric material, and a third dielectric filler distributed and disposed in the first dielectric film, the third dielectric filler including a paraelectric material and having an average diameter which is less than an average diameter of the second dielectric filler.
What exactly they claim (claim 1)
1. An integrated circuit device comprising: a transistor disposed on a substrate; and a capacitor structure electrically connected with the transistor, wherein the capacitor structure comprises: a first electrode; a dielectric film composite disposed on the first electrode; and a second electrode disposed on the dielectric film composite, and the dielectric film composite comprises: a first dielectric film including an anti-ferroelectric material; a second dielectric filler distributed and disposed in the first dielectric film, the second dielectric filler including a ferroelectric material; and a third dielectric filler distributed and disposed in the first dielectric film, the third dielectric filler including a paraelectric material and having an average diameter which is less than an average diameter of the second dielectric filler.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Integrated circuit device
- Patent number
- US12740076B2
- Application number
- 18239847
- Filed
- Aug 30, 2023
- Granted
- Sep 15, 2026
- Inventors
- 3
- Claims
- 20
Classified under
H10D 1/68 Electricity & electronicsH10B 12/315 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.