/Patent Tracker
SamsungGranted patentChips & hardwareInterest 3/10

Samsung patents storage trick that switches writing modes based on free space

Samsung has been granted a patent for a storage device that changes how it saves data depending on how much empty space is left. When there is plenty of room, it allows random writes using high-capacity memory cells, but when space gets tight, it switches to sequential writes on lower-capacity cells to manage the storage more efficiently.

Why it mattersThis is a routine improvement to how solid-state drives manage their internal memory, helping them maintain performance as they fill up.

In the filing’s own words

A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to, based on receiving an open zone command from an external host device: based on a number of free erase units from among a plurality of erase units included in the plurality of memory cells being greater than a threshold value, allocate at least two free erase units to a first-type zone, and based on the number of the free erase units being smaller than or equal to the threshold value, allocate the at least two free erase units to a second-type zone, wherein the controller is further configured to permit a random write based on a random logical address received from the external host device for the first-type zone, and to permit a zone write based on a sequential logical address received from the external host device for the second-type zone.

What exactly they claim (claim 1)

1. A method of operating a storage device comprising a nonvolatile memory device including a plurality of memory cells and a controller, the controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, the method comprising: based on receiving a first open zone command from an external host device and based on a number of free erase units from among a plurality of erase units included in the plurality of memory cells being greater than a threshold value, allocating, by the controller, at least two free erase units from among the free erase units to a first-type zone, and permitting a random write based on a random logical address received from the external host device for the first-type zone; and based on receiving a second open zone command and based on the number of the free erase units being smaller than or equal to the threshold value, allocating, by the controller, the at least two free erase units to a second-type zone, and permitting a zone write based on a sequential logical address received from the external host device for the second-type zone wherein a number of bits per memory cell of the first-type zone is smaller than a number of bits per memory cell of the second-type zone.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
Storage device including nonvolatile memory device and operating method of storage device
Patent number
US12737289B2
Application number
18999874
Filed
Dec 23, 2024
Granted
Sep 15, 2026
Inventors
4
Claims
20

Classified under

G06F 12/0292 Physics & computingG06F 3/0604 Physics & computingG06F 3/0619 Physics & computingG06F 3/0631 Physics & computingG06F 3/064 Physics & computingG06F 3/0647 Physics & computing
Read the full filing (official PDF) ↗ Open in the Patent Tracker

More from Samsung in Chips & hardware

Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.