Samsung patents image sensor with vertical pixel structure
Samsung describes an image sensor design where the pixel structure extends vertically through the chip substrate. The filing details a specific transistor layout using a fin structure and a silicon-fluorine layer to manage electrical properties.
In the filing’s own words
An image sensor includes a pixel division structure, a light sensing element, a transistor, a color filter array layer, and a microlens. The pixel division structure extends through a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, and defines unit pixel regions in which unit pixels are respectively formed. The light sensing element is formed in each of the unit pixel regions. The transistor is formed on the substrate. The color filter array layer is formed under the substrate, and includes color filters. The microlens is formed under the color filter array layer. The transistor includes a gate structure on an active fin protruding from the upper surface of the substrate and source/drain regions at portions of the active fin adjacent to the gate structure.
What exactly they claim (claim 1)
1. An image sensor comprising: a pixel division structure extending through a substrate in a vertical direction perpendicular to an upper surface of the substrate, the pixel division structure defining unit pixel regions in which unit pixels are respectively formed; a light sensing element in each of the unit pixel regions; a transistor on the substrate; a color filter array layer under the substrate, the color filter array layer including color filters; and a microlens under the color filter array layer, wherein the transistor comprises a gate structure on an active fin protruding from the upper surface of the substrate, and source/drain regions at portions of the active fin adjacent to the gate structure, and wherein the image sensor further comprises a silicon-fluorine layer at a portion of the active fin under the gate structure, or a polysilicon layer doped with fluorine between the gate structure and the active fin.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Image sensor
- Patent number
- US12733273B2
- Application number
- 18074042
- Filed
- Dec 2, 2022
- Granted
- Sep 8, 2026
- Inventors
- 4
- Claims
- 20
Classified under
H10F 39/80373 Electricity & electronicsH10F 39/014 Electricity & electronicsH10F 39/182 Electricity & electronicsH10F 39/8053 Electricity & electronicsH10F 39/8063 Electricity & electronicsH10F 39/807 Electricity & electronicsMore from Samsung in Chips & hardware
- Samsung patents chip that combines camera and screen Oct 13, 2026
- Samsung patents faster chip testing using machine learning Sep 1, 2026
- Samsung patents radar method to pinpoint target direction more accurately Sep 1, 2026
- Samsung patents memory chip that searches data by content, not address Sep 1, 2026
- Samsung patents chip design that skips empty data to speed up AI Sep 1, 2026
Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.