Samsung patents transistor design with layered metal oxide for better chips
Samsung has been granted a patent for a specific type of transistor used in computer chips. The design uses a semiconductor layer made of gallium, indium, or zinc, where the amount of gallium changes gradually across the layer to improve how the transistor switches on and off.
In the filing’s own words
Provided is a field effect transistor including a gate electrode layer, an oxide semiconductor layer including gallium (Ga) and at least one metal element selected from indium (In) and zinc (Zn), and a dielectric layer between the gate electrode layer and the oxide semiconductor layer, wherein the oxide semiconductor layer includes a sub semiconductor layer in contact with the dielectric layer and a main semiconductor layer spaced apart from the dielectric layer with the sub semiconductor layer therebetween, the sub semiconductor layer has a first Ga content, and the first Ga content of the sub semiconductor layer is greater than contents of other metal elements included in the sub semiconductor layer and decreases as a distance from an interface of the sub semiconductor layer in contact with the dielectric layer increases.
What exactly they claim (claim 1)
1. A field effect transistor comprising: a gate electrode layer; an oxide semiconductor layer including gallium (Ga) and at least one metal element selected from indium (In) and zinc (Zn); and a dielectric layer between the gate electrode layer and the oxide semiconductor layer, wherein the oxide semiconductor layer comprises a sub semiconductor layer in contact with the dielectric layer and a main semiconductor layer spaced apart from the dielectric layer with the sub semiconductor layer therebetween, wherein the sub semiconductor layer has a first Ga content, wherein the first Ga content of the sub semiconductor layer is greater than contents of other metal elements included in the sub semiconductor layer and decreases as a distance from a first surface of the sub semiconductor layer increases, the first surface being in contact with the dielectric, and wherein the first Ga content is at a highest value at the first surface of the sub semiconductor layer and at a lowest value at a second surface of the sub semiconductor layer, the second surface being opposite the first surface.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Field effect transistor with multi-layer metal oxide semiconductor and multi-layer metal oxide gate dielectric, and integrated circuit device including the same
- Patent number
- US12733213B2
- Application number
- 18236623
- Filed
- Aug 22, 2023
- Granted
- Sep 8, 2026
- Inventors
- 5
- Claims
- 20
Classified under
H10D 30/6755 Electricity & electronicsH10B 12/315 Electricity & electronicsH10B 12/482 Electricity & electronicsH10B 12/488 Electricity & electronicsH10D 30/6728 Electricity & electronicsH10D 62/102 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.