Samsung patents chip design with angled backside contacts
Samsung has secured a patent for a specific layout of an integrated circuit, which is the physical chip inside computers and phones. The design features a 'backside contact' structure that connects to the bottom of the chip's active area, with parts of the connection that widen and narrow in specific directions to fit the layout.
In the filing’s own words
An integrated circuit device includes an insulating structure, a source/drain region on the insulating structure, a pair of bottom semiconductor sheets being spaced apart from each other with the source/drain region therebetween in a first horizontal direction, a pair of channel regions spaced apart from the insulating structure with the bottom semiconductor sheets therebetween, a pair of gate lines respectively extending on the pair of channel regions on the bottom semiconductor sheets and extending longitudinally in a second horizontal direction perpendicular to the first horizontal direction, and a backside contact structure extending through the insulating structure to contact a bottom surface of the source/drain region, the backside contact structure including a first contact portion that has a width in the first horizontal direction increasing toward the source/drain region and a second contact portion that has a width in the first horizontal direction decreasing toward the source/drain region.
What exactly they claim (claim 1)
1. An integrated circuit device comprising: an insulating structure; a source/drain region on the insulating structure; a pair of bottom semiconductor sheets on the insulating structure, the pair of bottom semiconductor sheets being spaced apart from each other with the source/drain region therebetween in a first horizontal direction; a pair of channel regions spaced apart from the insulating structure with the pair of bottom semiconductor sheets therebetween; a pair of gate lines respectively extending on the pair of channel regions on the pair of bottom semiconductor sheets, the pair of gate lines extending longitudinally in a second horizontal direction, wherein the second horizontal direction is perpendicular to the first horizontal direction; and a backside contact structure extending through the insulating structure in a vertical direction and contacting a bottom surface of the source/drain region, the backside contact structure comprising a first contact portion that has a width in the first horizontal direction increasing toward the source/drain region and a second contact portion that has a width in the first horizontal direction decreasing toward the source/drain region, wherein the first contact portion directly contacts the second contact portion, and wherein a width of each of the first contact portion and the second contact portion in the second horizontal direction decrease toward the source/drain region.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Integrated circuit device
- Patent number
- US12733209B2
- Application number
- 18454112
- Filed
- Aug 23, 2023
- Granted
- Sep 8, 2026
- Inventors
- 4
- Claims
- 19
Classified under
H10D 30/6729 Electricity & electronicsH10D 30/014 Electricity & electronicsH10D 30/43 Electricity & electronicsH10D 30/6735 Electricity & electronicsH10D 62/121 Electricity & electronicsH10D 64/01 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.