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Samsung patents memory chip design using two types of oxide materials

Samsung has been granted a patent for a specific structure used in semiconductor memory devices. The design uses a channel made of an amorphous oxide material, which is mixed with a crystalline oxide layer to form the active part of the transistor.

Why it mattersThis is a detailed engineering improvement to how memory transistors are built, which could help make future chips more efficient or stable.

In the filing’s own words

A semiconductor device includes a bit line on a substrate, a gate electrode on the bit line, a gate insulation pattern on a sidewall of the gate electrode, a channel that contacts an upper surface of the bit line and a sidewall of the gate insulation pattern, an oxide semiconductor pattern that contacts an upper sidewall of the channel, and a contact plug that contacts an upper surface of the channel and an upper surface of the oxide semiconductor pattern. The channel includes an amorphous oxide semiconductor material. The oxide semiconductor pattern includes a crystalline oxide semiconductor material.

What exactly they claim (claim 1)

1. A semiconductor device comprising: a bit line on a substrate; a gate electrode on the bit line; a gate insulation pattern on a sidewall of the gate electrode; a channel that contacts an upper surface of the bit line and a sidewall of the gate insulation pattern, the channel including an amorphous oxide semiconductor material; an oxide semiconductor pattern that contacts an upper sidewall of the channel, the oxide semiconductor pattern including a crystalline oxide semiconductor material; and a contact plug that contacts a top surface of the channel and an upper surface of the oxide semiconductor pattern.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
Semiconductor devices
Patent number
US12733207B2
Application number
18347770
Filed
Jul 6, 2023
Granted
Sep 8, 2026
Inventors
1
Claims
20

Classified under

H10D 30/6728 Electricity & electronicsH10B 12/315 Electricity & electronicsH10B 12/482 Electricity & electronicsH10D 30/673 Electricity & electronicsH10D 30/6756 Electricity & electronicsH10W 20/435 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.