Samsung patents capacitor design using stacked ferroelectric layers
Samsung describes an integrated circuit component that combines a transistor with a capacitor structure. The capacitor uses alternating layers of anti-ferroelectric material and a specific hafnium-zirconium oxide compound, where the material composition shifts gradually within each layer.
In the filing’s own words
An integrated circuit device may include a transistor on a substrate, and a capacitor structure electrically connected to the transistor. The capacitor structure may include a first electrode, a dielectric layer structure on the first electrode, and a second electrode on the dielectric layer structure. The dielectric layer structure may include a plurality of first dielectric layers and a plurality of second dielectric layers which are alternately stacked. Each of the plurality of first dielectric layers may include an anti-ferroelectric material, and each of the plurality of second dielectric layers includes Hf 1-x Zr x O 2 in which 0<x<0.5, as a ferroelectric material. An x value may gradually change in a stack direction inside each of plurality of second dielectric layers.
What exactly they claim (claim 1)
1. An integrated circuit device comprising: a transistor on a substrate; and a capacitor structure electrically connected to the transistor, wherein the capacitor structure includes: a first electrode; a dielectric layer structure on the first electrode; and a second electrode on the dielectric layer structure, wherein the dielectric layer structure includes a plurality of first dielectric layers and a plurality of second dielectric layers which are alternately stacked, wherein each of the plurality of first dielectric layers includes an anti-ferroelectric material, and wherein each of the plurality of second dielectric layers includes Hf 1-x Zr x O 2 in which 0<x<0.5, as a ferroelectric material, wherein an x value gradually changes in a stack direction inside each of the plurality of second dielectric layers.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Integrated circuit device
- Patent number
- US12733185B2
- Application number
- 18238028
- Filed
- Aug 25, 2023
- Granted
- Sep 8, 2026
- Inventors
- 3
- Claims
- 20
Classified under
H10D 1/684 Electricity & electronicsH10B 53/10 Electricity & electronicsH10B 53/30 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.