Samsung patents 3D memory using ferroelectric materials
Samsung describes a semiconductor memory design that stacks data storage layers vertically to save space. The structure uses ferroelectric materials, which can hold data based on electrical charge direction, arranged between word lines and a central active pattern.
In the filing’s own words
A semiconductor memory device is provided. The semiconductor memory device includes: a bit line that extends in a first direction; first and second word lines that extend in a second direction and cross the bit line; an active pattern on the bit line between the first and second word lines, the active pattern including first second vertical parts that are opposite to each other, and a horizontal part that extends between the first and second vertical parts; a first data storage pattern between the first word line and the first vertical part of the active pattern; a second data storage pattern between the second word line and the second vertical part of the active pattern; and a source line connected to the active pattern, the source line extending the first direction and crossing the first word line and the second word line.
What exactly they claim (claim 1)
1. A semiconductor memory device, comprising: a bit line that extends in a first direction; a first word line that extends in a second direction and crosses the bit line; a second word line that is spaced apart from the first word line, extends in the second direction and crosses the bit line; an active pattern on the bit line between the first word line and the second word line, the active pattern comprising a first vertical part and a second vertical part that are opposite to each other, and a horizontal part that extends between the first vertical part and the second vertical part; a first data storage pattern between the first word line and the first vertical part of the active pattern; a second data storage pattern between the second word line and the second vertical part of the active pattern; and a source line connected to the active pattern, the source line extending the first direction and crossing the first word line and the second word line.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Three-dimensional ferroelectric semiconductor memory device
- Patent number
- US12733176B2
- Application number
- 18132196
- Filed
- Apr 7, 2023
- Granted
- Sep 8, 2026
- Inventors
- 3
- Claims
- 19
Classified under
H10B 51/30 Electricity & electronicsH10B 51/20 Electricity & electronicsH10B 51/40 Electricity & electronicsH10D 30/6728 Electricity & electronicsH10D 30/6733 Electricity & electronicsH10D 30/6757 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.