Samsung patents memory read method that checks neighboring cells to fix errors
Samsung describes a method for reading data from non-volatile memory chips by first checking the cells next to the target data. It uses the results from those neighboring cells, along with factors like temperature and wear, to adjust how the main data is read. This helps the system recover information that might otherwise be misread due to electrical interference.
In the filing’s own words
A data recover read (DRR) operation method of a nonvolatile memory system includes: performing a first read operation on adjacent memory cells, which are connected to an adjacent wordline adjacent to a target wordline, based on a first specific read level; obtaining a cell count value for the adjacent wordline; determining offset values for a normal read level of target memory cells, which are connected to the target wordline, based on the cell count value for the adjacent wordline; and performing a second read operation on the target memory cells, based on the determined offset values and a result of the first read operation.
What exactly they claim (claim 1)
1. A data recover read (DRR) operation method of a nonvolatile memory system, the DRR operation method comprising: performing a first read operation on adjacent memory cells, which are connected to an adjacent wordline adjacent to a target wordline, based on a first specific read level; obtaining a cell count value for the adjacent wordline; determining offset values for a normal read level of target memory cells, which are connected to the target wordline, by using at least one of an offset table or an algorithm, which defines an optimal offset value based on the cell count value for the adjacent wordline, as a first variable, and further based on a value of additional information, as a second variable; and performing a second read operation on the target memory cells, based on the determined offset values and a result of the first read operation, wherein the additional information comprises at least one of a program/erase (P/E) cycle of the target memory cells, temperature of the target memory cells, or a location of the target wordline, and wherein the offset table includes a plurality of predetermined offset values that respectively match with preset values of the cell count value and at least one of preset values of the P/E cycle of the target memory cells, preset values of the temperature of the target memory cells, or preset values of the location of the target wordline.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Non-volatile memory system and data recover read operation method thereof
- Patent number
- US12731653B2
- Application number
- 18762272
- Filed
- Jul 2, 2024
- Granted
- Sep 8, 2026
- Inventors
- 5
- Claims
- 18
Classified under
G11C 16/349 Physics & computingG11C 16/26 Physics & computingG11C 29/52 Physics & computingMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.