Samsung patents memory cell using two ferroelectric transistors
Samsung has been granted a patent for a type of memory called non-volatile content addressable memory that uses a simpler design. Each storage unit, or cell, is built from two ferroelectric transistors, one of a positive type and one of a negative type, connected together without needing extra parts like capacitors.
In the filing’s own words
Disclosed are a non-volatile content addressable memory device having a simple cell configuration and/or an operating method thereof. The non-volatile content addressable memory device includes a plurality of unit cells, wherein each of the plurality of unit cells consists of or includes a first ferroelectric transistor and a second ferroelectric transistor The first and second ferroelectric transistors are of different types such as different electrical types from each other. The first and second ferroelectric transistors may be connected in series or in parallel to each other. The first and second ferroelectric transistors may share one word line and one match line. The first and second ferroelectric transistors may share one search line. One of the first and second ferroelectric transistors may be connected to a search line and the other one may be connected to a bar search line. The first and second ferroelectric transistors may share one match line.
What exactly they claim (claim 1)
1. A memory device comprising: a unit cell comprising a first ferroelectric transistor including a first gate layer stacked on a first ferroelectric layer and a second ferroelectric transistor including a second gate layer stacked on a second ferroelectric layer, wherein one of the first ferroelectric transistor and the second ferroelectric transistor is a P-type transistor and an other of the first ferroelectric transistor and the second ferroelectric transistor is an N-type transistor, and wherein the unit cell does not include an inverter and a capacitor.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Non-volatile content addressable memory device having simple cell configuration and operating method of the same
- Patent number
- US12731640B2
- Application number
- 18621853
- Filed
- Mar 29, 2024
- Granted
- Sep 8, 2026
- Inventors
- 4
- Claims
- 20
Classified under
G11C 15/046 Physics & computingMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.