Samsung patents memory trick to speed up data reading in chips
Samsung has been granted a patent for a nonvolatile memory device that improves how data is read from multiple sections, or planes, of a chip. The system uses a control circuit to slightly delay the voltage setup times for each plane, allowing them to be read in a staggered sequence rather than all at once.
In the filing’s own words
A nonvolatile memory device includes a cell array divided into a plurality of planes, a voltage generator configured to generate a word line voltage applied to word lines of each of the plurality of planes, a row decoder configured to transmit the word line voltage to the cell array in response to an address, and a control circuit configured to set up voltages of word lines of each of the plurality of planes to the word line voltage in response to an activated pseudo plane independent read mode setting. The control circuit is configured to sequentially shift voltage setup times of the word lines by a specified time delay corresponding to a number of the plurality of planes.
What exactly they claim (claim 1)
1. A nonvolatile memory device, comprising: a cell array divided into a plurality of planes; a voltage generator configured to generate a plurality of word line voltages, each word line voltage of the plurality of word line voltages applied to a plurality of word lines of each plane of the plurality of planes; a row decoder configured to transmit the plurality of word line voltages to the cell array in response to an address; and a control circuit configured to set up word line voltages of each plane of the plurality of planes in response to an activated pseudo plane independent read mode setting, wherein the control circuit, in response to receiving a multi-plane command, is configured to sequentially shift voltage setup times of selected word lines of the plurality of word lines by a specified time delay corresponding to a number of selected planes of the plurality of planes, the selected planes including the selected word lines, the selected planes corresponding to the multi-plane command.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Nonvolatile memory device for performing multi-plane read operation and operation method thereof
- Patent number
- US12731630B2
- Application number
- 18495202
- Filed
- Oct 26, 2023
- Granted
- Sep 8, 2026
- Inventors
- 2
- Claims
- 19
Classified under
G11C 11/4074 Physics & computingG11C 11/4076 Physics & computingG11C 11/4087 Physics & computingG11C 11/4096 Physics & computingMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.