Sony patents transistor design for faster wireless signals
Sony describes a specific type of transistor called a High Electron Mobility Transistor (HEMT) that uses two different insulating layers to control the flow of electricity. The filing details the exact thickness and material properties of these layers to improve how the device handles radio frequency signals.
In the filing’s own words
A high electron mobility transistor and related devices are disclosed. In one example, a high electron mobility transistor includes a semiconductor layer, a gate electrode, and a gate insulating film between the semiconductor layer and the gate electrode. The gate insulating film includes a first insulating film in contact with the semiconductor layer and a second insulating film in contact with the first insulating film and the gate electrode.
What exactly they claim (claim 1)
1. A high electron mobility transistor comprising: a semiconductor layer; a gate electrode; and a gate insulating film provided between the semiconductor layer and the gate electrode, wherein the gate insulating film includes a first insulating film in contact with the semiconductor layer, and a second insulating film in contact with the first insulating film and the gate electrode, and the first insulating film and the second insulating film satisfy relational expressions (A), (B), and (C) below, EOT ( T 1) / EOT ( T 2) ≥ 1.43 ( A) EOT ( T 2) ≤ 0.75 nm ( B) ε1 ≥ ε 2 ( C) where T1: a thickness (nm) of the first insulating film T2: a thickness (nm) of the second insulating film EOT(T1): an equivalent oxide film thickness of the first insulating film EOT(T2): an equivalent oxide film thickness of the second insulating film ε1: a relative permittivity of the first insulating film ε2: a relative permittivity of the second insulating film EOT: an equivalent oxide film thickness indicating a film thickness equivalent to a film thickness of a silicon oxide film in terms of electrostatic capacitance.
Facts
- Company
- Sony (Sony Semiconductor Solutions Corporation)
- Official title
- HIGH ELECTRON MOBILITY TRANSISTOR, RF SWITCH CIRCUIT, POWER AMPLIFIER CIRCUIT, AND WIRELESS COMMUNICATION TERMINAL
- Publication number
- US20260293184A1
- Application number
- 19490145
- Filed
- May 15, 2024
- Published
- Sep 24, 2026
- Inventors
- 1
- Claims
- 15
Classified under
H10D 30/476 Electricity & electronicsH10D 30/015 Electricity & electronicsH10D 30/475 Electricity & electronicsH10D 64/514 Electricity & electronicsH10D 64/685 Electricity & electronicsMore from Sony in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.