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Samsung patents AI method to tune semiconductor diffusion physics

Samsung describes a method that uses an artificial neural network to simulate how atoms move through silicon during chip manufacturing. The system compares the simulation to real measurements and the underlying physics equations to adjust the physical parameters for better accuracy.

Why it mattersThis approach could help chipmakers refine manufacturing models more efficiently by combining data with established physics, potentially improving the precision of semiconductor production.

In the filing’s own words

A method for optimization of physical parameters of physical equations for a semiconductor process includes generating output data that surrogates a solution of the physical equations using an artificial neural network, calculating a total loss function based on a first loss function for the output data and measured data and a second loss function for the output data and the physical equations, training neural network parameters of the artificial neural network and physical parameters of the physical equations based on the total loss function and the artificial neural network, and performing optimization of the physical parameters based on the total loss function in which the neural network parameters are set to have fixed values by the training.

What exactly they claim (claim 1)

1. A method for optimization of physical parameters for a semiconductor process involving a dopant diffusion, the method comprising: generating, using an artificial neural network, output data that simulates a solution of physical equations related to the dopant diffusion; determining a total loss function based on (i) a first loss function indicative of a difference between the output data and measured data related to dopant concentration resulting from the dopant diffusion and (ii) a second loss function based on the output data and the physical equations; training, based on the total loss function and the artificial neural network, neural network parameters of the artificial neural network and physical parameters of the physical equations; and performing optimization of the physical parameters based on the total loss function, the neural network parameters related to the total loss function being set to fixed values based on the training.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
METHOD AND SYSTEM FOR OPTIMIZATION OF PHYSICAL PARAMETERS FOR SEMICONDUCTOR
Publication number
US20260288091A1
Application number
19572442
Filed
Mar 19, 2026
Published
Sep 24, 2026
Inventors
5
Claims
20

Classified under

G05B 13/0265 Physics & computingH10P 32/00 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.