Sony patents magnetic memory that switches direction with voltage
Sony has been granted a patent for a magnetoresistive element used in magnetic memory. The design features a magnetic layer that normally points up or down but can be switched to lie flat when specific voltages are applied. By using different voltage strengths and directions, the element can change its magnetic orientation to store data.
In the filing’s own words
Provided is a magnetoresistive element with a second magnetic layer. The second magnetic layer is a perpendicular magnetization layer when no voltage is applied to the magnetoresistive element, changes from the perpendicular magnetization layer to an in-plane magnetization layer when a first voltage is applied to the magnetoresistive element, and changes from the perpendicular magnetization layer to the in-plane magnetization layer when a second voltage is applied to the magnetoresistive element. Magnetization of the second magnetic layer changes to a first direction of a direction perpendicular to a plane of the layer after a third voltage is applied to the magnetoresistive element for a first period of time and changes to a second direction of the direction perpendicular to the plane of the layer after a fourth voltage is applied to the magnetoresistive element for a second period of time.
What exactly they claim (claim 1)
1. A magnetoresistive element, comprising: a first magnetic layer; a second magnetic layer configured to change between a perpendicular magnetization layer in which perpendicular magnetic anisotropy energy is positive, and an in-plane magnetization layer in which the perpendicular magnetic anisotropy energy is negative, wherein the perpendicular magnetic anisotropy energy is based on a difference between first magnetic energy when magnetized in a plane direction of the second magnetic layer and second magnetic energy when magnetized in a direction perpendicular to the plane direction of the second magnetic layer; and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer: is the perpendicular magnetization layer when no voltage is applied to the magnetoresistive element; changes from the perpendicular magnetization layer to the in-plane magnetization layer when a first voltage is applied to the magnetoresistive element; and changes from the perpendicular magnetization layer to the in-plane magnetization layer when a second voltage is applied to the magnetoresistive element, magnetization of the second magnetic layer: changes to a first direction of the direction perpendicular to the plane direction of the second magnetic layer after a third voltage is applied to the magnetoresistive element for a first period of time; and changes to a second direction of the direction perpendicular to the plane direction of the second magnetic layer after a fourth voltage is applied to the magnetoresistive element for a second period of time, the first voltage and the second voltage are in opposite directions, the third voltage and the fourth voltage are in opposite directions, the first voltage and the third voltage are in a same direction, the second voltage and the fourth voltage are in a same direction, an absolute value of the third voltage is less than or equal to twice an absolute value of the first voltage, and an absolute value of the fourth voltage is less than or equal to twice an absolute value of the second voltage.
Facts
- Company
- Sony (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
- Official title
- Magnetoresistive element and magnetic memory
- Patent number
- US12772744B2
- Application number
- 18729141
- Filed
- Dec 27, 2022
- Granted
- Oct 20, 2026
- Inventors
- 5
- Claims
- 8
Classified under
H10N 50/10 Electricity & electronicsG11C 11/161 Physics & computingG11C 11/1673 Physics & computingG11C 11/1675 Physics & computingH01F 10/3286 Electricity & electronicsH10N 50/80 Electricity & electronicsMore from Sony in Chips & hardware
- Sony patents light sensor that adjusts how it counts incoming photons Sep 1, 2026
- Sony patents camera sensor with two pixel types for better motion detection Sep 1, 2026
- Sony patents game graphics that adjust quality based on hardware heat Sep 8, 2026
- Sony patents camera sensor design that stacks chips to shrink pixels Sep 8, 2026
- Sony patents chip design that measures internal temperature from outside Sep 8, 2026
Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.