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SonyGranted patentChips & hardwareInterest 6/10

Sony patents camera sensor design to reduce noise in tiny transistors

Patent drawing
Patent drawing from the official filing.

Sony has secured a patent for a solid-state imaging device, commonly found in camera sensors, that uses a specific type of amplifying transistor to handle electrical signals. The design features a fully-depleted transistor structure intended to manage the flow of charge from the light-sensitive parts of the sensor. This approach aims to maintain signal quality even as the physical components of the sensor become smaller.

Why it mattersThis filing is interesting to photography enthusiasts and tech watchers because it addresses a fundamental limit in making camera sensors smaller without losing image quality.

In the filing’s own words

The present technique relates to a solid-state imaging device, a solid-state imaging device manufacturing method, and an electronic apparatus that are capable of providing a solid-state imaging device that can prevent generation of RTS noise due to miniaturization of amplifying transistors, and can achieve a smaller size and a higher degree of integration accordingly. A solid-state imaging device includes a photodiode as a photoelectric conversion unit, a transfer gate that reads out charges from the photodiode, a floating diffusion from which the charges of the photodiode are read by an operation of the transfer gate, and an amplifying transistor connected to the floating diffusion. More particularly, the amplifying transistor is of a fully-depleted type. Such an amplifying transistor includes an amplifier gate (gate electrode) extending in a direction perpendicular to convex strips formed by processing a surface layer of a semiconductor layer, for example.

What exactly they claim (claim 1)

1. A light detecting device, comprising: a first photoelectric conversion unit; a transfer gate configured to read out charges from the first photoelectric conversion unit; a floating diffusion from which the charges of the first photoelectric conversion unit are read by an operation of the transfer gate; and an amplifying transistor connected to the floating diffusion, wherein a channel portion of the amplifying transistor comprises an intrinsic semiconductor.

Facts

Company
Sony (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
Official title
Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
Patent number
US12764436B2
Application number
18804704
Filed
Aug 14, 2024
Granted
Oct 13, 2026
Inventors
1
Claims
8

Classified under

H04N 25/76 Electricity & electronicsH04N 25/618 Electricity & electronicsH04N 25/77 Electricity & electronicsH04N 25/78 Electricity & electronicsH10F 39/18 Electricity & electronicsH10F 39/8027 Electricity & electronics

More from Sony in Chips & hardware

Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.