Sony patents laser design using aluminum oxide to control current flow

1. A vertical cavity surface emitting laser device, comprising: a first reflection mirror configured to reflect light of a specific wavelength; a second reflection mirror configured to reflect the light of the specific wavelength; a first semiconductor layer between the first reflection mirror and the second reflection mirror, wherein the first semiconductor layer includes a semiconductor material having a first conductivity type; a second semiconductor layer between the first reflection mirror and the second reflection mirror, wherein the second semiconductor layer includes a semiconductor material having a second conductivity type; a tunnel junction layer between the first reflection mirror and the second reflection mirror, wherein the tunnel junction layer includes a first doped layer of the first conductivity type and a second doped layer of the second conductivity type, the first doped layer is joined with the second doped layer in the tunnel junction layer, each of the first doped layer and the second doped layer has a doping concentration higher than that of the first semiconductor layer and the second semiconductor layer, each of the first doped layer and the second doped layer includes: an inner peripheral region on an inner peripheral side of the tunnel junction layer when viewed from a direction perpendicular to a layer surface of the tunnel junction layer, and an outer peripheral region surrounding the inner peripheral region, the inner peripheral region of the each of the first doped layer and the second doped layer includes Al, and the outer peripheral region of the each of the first doped layer and the second doped layer includes an Al oxide; and a light-emitting layer between the first reflection mirror and the second reflection mirror, wherein the light-emitting layer is configured to emit the light by carrier recombination, and the vertical cavity surface emitting laser device has a mesa structure that has a current injection region where a current that passes through the inner peripheral region and flows into the light-emitting layer concentrates.