Samsung patents image sensor with backside scattering structure
Samsung describes an image sensor design that uses a specific arrangement of photodiodes and isolation layers to capture light. It includes a scattering structure on the back of the sensor to help manage how light enters the device.
In the filing’s own words
An image sensor includes a substrate including first to fourth photodiode regions, a first isolation layer formed to surround the first to fourth photodiode regions, a second isolation layer formed to protrude from the first isolation layer and separating the first to fourth photodiode regions, a floating diffusion region formed on the first surface and in which photocharges formed in a photodiode of each of the first to fourth photodiode regions accumulate, a backside scattering structure formed inside a trench formed in the second surface of the substrate, and at least one micro-lens, wherein respective gates of first to fourth transfer transistors are electrically connected to one another, the second isolation layer is formed to expose a central region of the first to fourth photodiode regions, and the floating diffusion region is arranged in the central region of the first to fourth photodiode regions.
What exactly they claim (claim 1)
1. An image sensor comprising: a substrate including first to fourth photodiode regions in which a photodiode is respectively formed; a first isolation layer formed to surround the first to fourth photodiode regions and penetrating from a first surface of the substrate to a second surface of the substrate that is opposite to the first surface; a second isolation layer formed to protrude from the first isolation layer and separating the first to fourth photodiode regions; a floating diffusion region formed on the first surface of the substrate and in which photocharges generated in the photodiode of each of the first to fourth photodiode regions accumulate; at least one backside scattering structure formed inside a trench formed in the second surface of the substrate; and at least one micro-lens placed on the second surface of the substrate, wherein: respective gates of first to fourth transfer transistors are electrically connected to one another, the second isolation layer is formed to expose a central region of the first to fourth photodiode regions, and the floating diffusion region is arranged in the central region of the first to fourth photodiode regions.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- IMAGE SENSOR INCLUDING BACKSIDE SCATTERING STRUCTURE
- Publication number
- US20260293352A1
- Application number
- 19572213
- Filed
- Mar 19, 2026
- Published
- Sep 24, 2026
- Inventors
- 7
- Claims
- 20
Classified under
H10F 39/807 Electricity & electronicsH10F 39/8063 Electricity & electronicsMore from Samsung in Cameras & imaging
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.