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Samsung patents camera pixels that use nanostructures to catch more light

Samsung describes a design for image sensor pixels that uses a tiny nanostructure to guide light into the detector. This structure helps steer light that bounces off a back reflector toward the part of the pixel that captures the image.

Why it mattersThis could lead to camera sensors that work better in low light by capturing more of the light that enters the lens.

In the filing’s own words

Provided are systems, methods, and apparatuses for short-wave infrared pixels based on non-scattering nanostructures. In one or more examples, the systems, devices, and methods include forming a back reflector on a substrate, the back reflector being configured to reflect electromagnetic radiation; forming a first doped region of a first semiconductor adjacent to the back reflector; forming an absorption region of a second semiconductor adjacent to at least a portion of the first doped region, the absorption region being configured as a photodetector; forming a second doped region of the first semiconductor adjacent to the absorption region; and forming a nanostructure adjacent to the second doped region, the nanostructure configured to allow light incident on the pixel to pass through the nanostructure and to steer a portion of the light reflected off the back reflector towards the absorption region.

What exactly they claim (claim 1)

1. A pixel of an image sensor comprising: a back reflector formed on a substrate, the back reflector being configured to reflect electromagnetic radiation; a first doped region of a first semiconductor formed adjacent to the back reflector; an absorption region of a second semiconductor configured as a photodetector of the pixel, the absorption region being formed adjacent to at least a portion of the first doped region; a second doped region of the first semiconductor formed adjacent to the absorption region, the second doped region being configured to pass the electromagnetic radiation to the absorption region; and a nanostructure formed adjacent to the second doped region, the nanostructure being configured to: steer light that passes through the nanostructure towards the absorption region; and steer, towards the absorption region, a portion of the light that reflects off the back reflector.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
SHORT-WAVE INFRARED PIXELS BASED ON NON-SCATTERING NANOSTRUCTURES
Publication number
US20260282581A1
Application number
19238437
Filed
Jun 14, 2025
Published
Sep 17, 2026
Inventors
1
Claims
20

Classified under

H10F 39/8063 Electricity & electronicsH10F 39/024 Electricity & electronicsH10F 39/184 Electricity & electronicsH10F 39/8067 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.