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Apple patents memory method to keep data stable over time

Apple describes a technique for writing data to storage chips that adjusts the electrical check used to confirm the write was successful. The system changes this check based on how much the data is expected to degrade or 'drift' over time. This helps ensure the memory cells hold their values accurately for longer periods.

Why it mattersThis is a routine improvement to internal memory management that helps maintain data reliability in devices like phones and computers.

In the filing’s own words

An apparatus for data storage includes circuitry and a plurality of memory cells. The memory cells are coupled to word lines (WLs), and are configured to store data values in respective predefined programming levels. The circuitry is configured to: receive data values for storage in the memory cells of a given WL, select memory cells of the given WL that are to store a given data value among the received data values, set a verification voltage for programming the selected memory cells, so that a difference between the verification voltage and a read voltage predetermined for the selected memory cells depends on a rate of drift that is expected to occur to a threshold voltage distribution associated with the selected memory cells when programmed, apply one or more programming pulses to the given WL, and verify that the selected memory cells have been programmed successfully using the set verification voltage.

What exactly they claim (claim 1)

1. An apparatus for data storage, comprising: a plurality of memory cells coupled to multiple word lines (WLs), the memory cells configured to store data values in multiple respective predefined programming levels; and storage circuitry, configured to: receive data values for storage in the memory cells of a given WL; select memory cells of the given WL that are to store a given data value among the received data values; set a verification voltage for programming the selected memory cells, so that a difference between the verification voltage and a read voltage predetermined for the selected memory cells depends on a rate of drift that is expected to occur to a threshold voltage distribution (TVD) associated with the selected memory cells when programmed, by: holding a predefined dependency between verification voltages and (i) the given data value, and (ii) one or both of a first neighbor data value previously stored in first neighbor memory cells neighboring the selected memory cells, and a second neighbor data value to be programmed in second neighbor memory cells neighboring the selected memory cells; and setting the verification voltage using the predefined dependency; apply one or more programming pulses to the given WL; and verify that the selected memory cells have been programmed successfully using the set verification voltage.

Facts

Company
Apple (Apple Inc.)
Official title
Memory programming schemes with adjustable verification voltages for reducing data retention loss
Patent number
US12763157B2
Application number
18775017
Filed
Jul 17, 2024
Granted
Oct 13, 2026
Inventors
5
Claims
12

Classified under

G11C 16/3459 Physics & computingG11C 13/0033 Physics & computingG11C 16/10 Physics & computingG11C 16/3418 Physics & computingG11C 16/3427 Physics & computingG11C 16/3436 Physics & computing
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.